| PART |
Description |
Maker |
| MAX11014BGTM MAX11015BGTM MAX1101408 |
Automatic RF MESFET Amplifier Drain-Current Controllers
|
Maxim Integrated Products
|
| LMA183 |
2-18 GHz MESFET Amplifier
|
Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| NEZ1011-8E NEZ1414-8E |
8W X, Ku-BAND POWER GaAs MESFET 8瓦特十，KU波段功率GaAs MESFET
8W X / Ku-BAND POWER GaAs MESFET
8W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MAX98502 |
Boosted 2.2W Class D Amplifier with Automatic Level Control
|
Maxim Integrated Products
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| GBC846 |
The GBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
NPN EPITAXIAL PLANAR TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
http://
|
| KGL4216 |
10-Gbps T-Flip Flop IC 0.2μm Gate Length GaAs MESFET Technology
10-Gbps T-Flip Flop IC 0.2レm Gate Length GaAs MESFET Technology
10-Gbps T-Flip Flop IC 0.2m Gate Length GaAs MESFET Technology
|
OKI[OKI electronic componets]
OKI electronic components
|
| KGL4205 |
10-Gbps D-Flip Flop IC 0.2μm Gate Length GaAs MESFET Technology
10-Gbps D-Flip Flop IC 0.2レm Gate Length GaAs MESFET Technology
10-Gbps D-Flip Flop IC 0.2m Gate Length GaAs MESFET Technology
|
OKI[OKI electronic componets]
OKI electronic components
|
| CRF24010 |
10 W, SiC RF Power MESFET
|
CREE[Cree, Inc]
|
